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產業_SEMICON2026矽光子論壇_UMC簡報_20260831

更新 2026-10-23

PDF 原檔:產業_SEMICON2026矽光子論壇_UMC簡報_20260831_original.pdf

原始內容

Breaking through the DCI data rate barrier

Wenchi Ting, Ph. D. Vice President Corporate Technology Office UMC

Outline

  • 1 | Bandwidth scaling laws
  • 2 | Challenges from higher data rates
  • 3 | Modulator selection
  • 4 | Coherent technology comes to rescue?
  • 5 | WDM vs single wavelength
  • 6 | Summary

UMC

Copyright © UMC

2

Is there a data rate scaling law equivalent to Moore's law for CMOS scaling?

  • You bet there is. In fact there are two such laws I managed to find.
  • Edholm's Law of Bandwidth: Telecommunication bandwidth doubles approximately every 18 months.
  • Nielsen's Law of Internet Bandwidth: Bandwidth capacity roughly doubles every 21 months.
  • What does this mean for DCI's (data center interconnects): Roughly every a year and a half to two years, the capacity/module doubles.
bandwidth capacity peak market adoption
10G to 40G 2018~2022
100G 2020~2024
400G 2023~2026
800G 2025~2028
1.6T and beyond 2025+

per Gemini

Challenges from higher data rates

  • In this presentation we focus on the scaling trend of DCI's date rate/channel, not per module, and on the photonic part of the transceivers.
  • Critical components in an electrical-optical transceiver:
  • The modulator
  • The DSP/SERDES
  • EIC: TIA and driver
  • The photo diode
  • 200 Gbps/channel already happened. The most common configuration:
  • PAM4
  • Si MZM (DFB laser)
  • Ge PD
  • SiGe BiCMOS TIA/driver
  • Advanced logic DSP/SERDES
  • IM/DD, single-wavelength
  • 400 Gbps/channel in demo status, facing many challenges, as almost every component seems shaky at such data rate.
  • Si modulators out of steam
  • Ge PD bandwidth very marginal
  • Bipolar transistors need to reach 500 GHz f T for TIA/driver
  • DSP/SERDES extremely difficult to design

Courtesy of Cisco

UMC

Can this scaling trend go on forever?

  • The scaling trend is not likely to continue in a brute-force manner. Both electronics and optics face stiff challenges at 400 Gbps/channel and above.
  • SERDES facing CMOS performance limitation.
  • On optical side both photo diodes and Si modulators face bandwidth limitations.
  • 400 Gpbs/channel (PAM4) requires > 110 GHz electrical 3-dB bandwidth!
  • 300 Gbps/channel a 'bridging' data rate spec
  • Paths to higher data rates (400 Gbps/channel and above):
  • PAM4 -> PAM8
  • Adopting components with higher bandwidth
  • Coherent transmission
  • WDM: multiple wavelengths per channel
  • A combination of the above

Modulator selection

  • Modulator - maybe the most critical device of the photonic technology.
  • Si and SiGe modulators:
  • MZM:

Courtesy of Photonic Spectra

Table 1. State-of-the-art high bandwidth all-silicon MMs.

structure BW (GHz) Vr (V) BWN* (GHZV)
segmented drive [11] 67 5 13.4
substrate removed + 35 S load [14] 60 7 8.6
low load impedance [12] 47 5.4 8.7
microring-assisted MZMs [13] 67 7.5 8.9
distributed micro-capacitors [1] 61 8.3 7.3
doping optimization [15] 67 5 13.4
conventional [10] 44 8 5.5
conventional [16] 41 7 5.9
slow light waveguide |9] 110 78 1.4
transparent electrodes (This work) 168 7 23
transparent electrodes (This work) 140 28

Modulator selection

  1. MRM:

Jayatilleka et al., Intel, 2022

UMC

  • Small foot print
  • Low drive voltage
  • High intrinsic electrical bandwidth (due to low resistance)
  • Extremely sensitive to temperature
  • Demanding on process control
  • Trading off extinction ratio against speed
  • Not a promising candidate for 400 Gbps/channel and above

Modulator selection

  1. SiGe EAM:

Verbist et al., J. Lightwave Technology, 2016

Courtesy of Gemini

Feature SiGe EAM MZM
Footprint Very small (~ 50 μm) Large (millimeters)
Drive Voltage Low (~ 1V - 3V) High
Energy Efficiency High (fJ/bit range) Moderate
Optical Bandwidth Narrow (wavelength specific) Wide (broadband)
Chirp / Dispersion High (can cause penalty over distance) Lower than SiGe EAM
Primary Use Cases Short-reach data centers, AI tensor cores, on-board optical transceivers Long-haul telecom, coherent optical networks, high-power applications

Modulator selection

  • Other candidates:
  • InP EML (laser+EAM) and MZM
  • Thin-film LiNbO 3 (TFLN) MZM
  • Organic
  • Graphene
  • Thin-film LiTaO 3
  • …
  • InP and TFLN are the two most promising solutions, as these are much more mature than the other contenders.

TFLN modulators

  • UMC Group's TFLN program started on 2021.
  • 6' in mass production, 8' in sampling
  • LiNbO3 's excellent optical and E/O properties coupled with mature TFLN substrate infrastructure (up to 8' in substrate size) making TFLN the leading modulator candidate for 400 Gbps/channel and above.
產業_SEMICON2026矽光子論壇_UMC簡報_20260831_007

Zhang et al ., Optica, 2021

TFLN pros and cons

  • Strengths: low loss, high bandwidth (> 110 GHz), good thermal stability, superb linearity.
  • Weaknesses: large, expensive (compared with Si), integration with SiPh requiring either heterogeneous integration or advanced packaging.

Kharel et al ., Optica 2021

Copyright © UMC

TFLN is here to stay

  • InP facing severe shortage, adding to TFLN's momentum.
  • TFLN the best modulator solution for Coherent Lite given its superb linearity. It is the best solution for 400 Gbps/lane IMDD too.
  • Integrating TFLN with PIC is a challenge as well as an opportunity. This is in hot pursuit.
  • Advanced packaging schemes and micro transfer printing are both promising candidates.
  • UMC is developing the integration technology, leveraging our expertise in PIC, TFLN, and advanced packaging.
  • Rather diverse applications of TFLN are being explored, across a number of wavelengths. Innovations taking advantage of LiNbO 3 's unique optical properties are happening at an unexpected pace. This is perhaps only the tip of the iceberg.

Ge Photo Diodes

  • Good enough for 200 Gbps (bandwidth ~ 50+ GHz) but marginal at 400 Gbps/channel (110+ GHz).
  • May still make it to 400 Gbps/channel with process/layout/design optimization.
  • High uncertainty whether Ge PD can ever go beyond 400 Gbps.
  • InP very expensive and harder to integrate.
  • Alternative materials being explored: GeSn, SiSn, etc., but still early on the learning curve .

Coherent technology comes to the rescue?

  • Traditionally, coherent technology was used for telecom only, not for datacom.
  • Expensive, bulky, and energy hungry.
  • Modulating amplitude, phase, and polarization.
  • Carrying huge data load over very long distances.
  • Coherent Lite is now entering datacom as a viable solution for :
  • Connecting servers that could be a Km away within the same data center.
  • Providing relief to the bandwidth challenge.
  • Additional optical loss (~ 3 dB) from OCS helps justify Coherent Lite over IM/DD.
  • Coherent Lite could be different from a telecom coherent technology:
  • O-band
  • Shorter reach (2~20 Km)
  • Single polarization
  • Hardware simplified
  • Lower power
  • Lower cost

Coherent technology comes to the rescue?

https://techtimes.dexerials.jp/en/photonics/coherent-lite-pic/

產業_SEMICON2026矽光子論壇_UMC簡報_20260831_012

https://fundaai.substack.com/p/deepcoherent-lite-reshapes-ai-optical

WDM

  • Squeezing multiple  's into the same channel.
  • DWDM (8 or more  's/fiber) and CWDM (fewer than 8  's/fiber).
  • Actively pursued for scale-up CPO applications to handle the large amount of electronic channels.
  • Multiple single- lasers are easier to implement but comb-lasers may be a better solution in the long run due to better power efficiency.

So what is likely to happen at 400 Gbps and beyond, for DCI?

  • Adoption of higher-performance modulators (TFLN/InP) and improvement in photo diodes are key factors affecting deployment of plain-vanilla (non-WDM, IM/DD) DCI's with 400 Gbps/channel performance and beyond.
  • A combination of WDM, PAM8, and even coherent transmission may be more 'elegant' solutions than brute-force bandwidth scaling. And these are being actively pursued.
  • The scaling law in DCI's data rate/channel is likely to slow down as transceivers becoming more complicated to enable WDM and coherent coding schemes, and/or to incorporate non-Si (TFLN, InP) modulators.
  • As a result, future connectivity scaling will increasingly rely on heterogeneous integration and advanced photonic platforms, rather than brute-forcing wider bandwidth from each component.

Conclusion

  • Winning solutions for future DCI need to be balanced in cost and performance, likely leveraging optical components made by different materials and integrated together seamlessly through advanced packaging schemes.

[讀者資訊已遮蔽] [讀者資訊已遮蔽]

Thank you!

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檔名 size 分類 親眼所見內容
產業_SEMICON2026矽光子論壇_UMC簡報_20260831_001.png 87KB 真資料圖 LightCounting 光模組銷售額堆疊長條圖(2024–2030,速率別 25G 至 3.2T,標註 800G、1.6T 兩處箭頭)
產業_SEMICON2026矽光子論壇_UMC簡報_20260831_002.png 225KB 真資料圖 光電收發器方塊圖(Courtesy of Cisco):Transmitter(Driver/Modulator/Clock Data Recovery/Equalization)、Receiver(TIA/LA/Pre-emphasis/Output driver)、Photodiode、Fiber array coupling interface、Laser source、Micro-controller,並區分電子元件(綠)與光子元件(藍)
產業_SEMICON2026矽光子論壇_UMC簡報_20260831_003.png 60KB 真資料圖 Si MZM 結構:上為 1×2 MMI/p-n 相位移器/2×1 MMI 俯視示意,下為行波電極(Ground/Signal/Ground)與 n-Si/p-Si 波導剖面
產業_SEMICON2026矽光子論壇_UMC簡報_20260831_004.png 351KB 真資料圖 微環調變器(MRM,Intel 2022)立體結構:Ge implant、PD bias、pn junction、V heater、Tungsten、Via 等圖例
產業_SEMICON2026矽光子論壇_UMC簡報_20260831_005.png 216KB 真資料圖 SiGe EAM 剖面(n-i-p,GeSi 600 nm 寬、300 nm 厚,摻雜濃度色階)與 C-band 元件尺度 100 µm 示意(Verbist, JLT 2016)
產業_SEMICON2026矽光子論壇_UMC簡報_20260831_006.png 328KB 真資料圖 SiGe EAM vs MZM 比較表(Footprint、Drive Voltage、Energy Efficiency、Optical Bandwidth、Chirp/Dispersion、Primary Use Cases)
產業_SEMICON2026矽光子論壇_UMC簡報_20260831_007.png 359KB 真資料圖 各調變材料平台散點圖(Zhang, Optica 2021):左為相位移器損耗 vs 半波電壓,右為頻寬(GHz)vs 半波電壓;圖例 Hybrid/Monolithic LNOI、SOI、InP、Plasmonic、SOH、BTO/Si、Legacy bulk LN、AlGaAs
產業_SEMICON2026矽光子論壇_UMC簡報_20260831_008.png 213KB 真資料圖 TFLN MZM 示意(Optical signal/RF signal 行波電極與參數 h、w 標示,右上標 TFLN MZM)
產業_SEMICON2026矽光子論壇_UMC簡報_20260831_009.png 53KB 真資料圖 灰階電鏡影像(標 (b)),為 TFLN 調變器電極區截面/俯視圖,無文字說明
產業_SEMICON2026矽光子論壇_UMC簡報_20260831_010.png 92KB 真資料圖 TFLN 調變器立體示意((c)(d) 兩組電極結構,LN 波導與金電極,光斑標示)
產業_SEMICON2026矽光子論壇_UMC簡報_20260831_011.png 21KB 真資料圖 TFLN 波導剖面((e):LN、SiO2、Au,Quartz 基底,標 h、w0、s、g)
產業_SEMICON2026矽光子論壇_UMC簡報_20260831_012.png 98KB 真資料圖 速率×傳輸距離應用地圖:縱軸 400G/800G/1.6T/3.2T/6.4T,橫軸 DR<500m/FR<2km/LR<10km/ER<40km/ZR/ZR+<1000km;IMDD PAM4(100G/lane 50GBd、200G/lane 100GBd、400G/lane 200GBd,O-band)、Coherent Lite 16QAM(130GBd、260GBd,O/C-band)、Coherent 16QAM(60/130/260GBd,C-band)各占區塊
產業_SEMICON2026矽光子論壇_UMC簡報_20260831_013.png 71KB 真資料圖 相干收發架構:Tx 為雷射→MZM I/MZM Q→3dB coupler→SP-QAM(QPSK/16QAM);Rx 為 PBS/Pol-Folding→Hybrid→BPD→TIA→ADC→DSP,含 LO
產業_SEMICON2026矽光子論壇_UMC簡報_20260831_014.png 211KB 真資料圖 WDM 示意:四個 Data Channel 不同波長(紫/青/綠/紅)經 Optical coupler 合入單一光纖
產業_SEMICON2026矽光子論壇_UMC簡報_20260831_p12.jpg 137KB 文字卡 第 12 頁整頁渲染:「TFLN is here to stay」四點條列(內容已在原始內容文字中)
產業_SEMICON2026矽光子論壇_UMC簡報_20260831_p17.jpg 144KB 文字卡 第 17 頁整頁渲染:結論條列(內容已在原始內容文字中)